Semiconductor research on semiconductor semiconductor quantum well lasers has made important progress

[ China Instrument Network Instrument Development ] Recently, the team of researchers of the State Key Laboratory of Superlattice, Institute of Semiconductors, Chinese Academy of Sciences, Niu Zhichuan made new breakthroughs in the research of single-mode and high-power quantum well lasers for telluride semiconductors. Metal grating laterally coupled distributed feedback (LC-DFB) quantum well single mode laser achieves high power (>40mW) room temperature continuous output at 2μm band high side mode rejection ratio (~53dB). The results were published in Appl.Phys.Lett.114, 021102 (2019) and immediately reported by Compound Semiconductor. The FP cavity quantum well high-power laser single-tube and bar-bar assemblies realize the continuous output power of room temperature of 1.62 watts and 16 watts respectively, breaking through the provisions of the high-end laser import limit performance. The relevant results were selected as cover articles by Chin.Phys.B.28(1)(2019).

Power diagram of high power linear array laser in CPB article

In recent years, with the support of the National 973 Major Scientific Research Program, major projects of the National Natural Science Foundation of China, and key projects, the research team led by Niu Zhichuan has in-depth research on the material physics of bismuth semiconductors and the epitaxial growth of heterojunction low-dimensional materials. And the preparation technology of optoelectronic devices, systematically mastered the 锑 量子 quantum well, superlattice low-dimensional material physical characteristics theoretical analysis and molecular beam epitaxial growth method, breaking through the core of etching and passivation of bismuth telluride quantum well laser Based on the process technology, the innovative design of metal grating laterally coupled distributed feedback (LC-DFB) structure successfully realized a high-performance single-mode laser with 2μm band. The side mode suppression ratio reached 53dB, which is the highest value of the current similar devices, and the output power reaches 40mW. It is more than three times that of current similar devices. The related results were published in the long-term report of Appl.Phys.Lett.114,021102 (2019) by the internationally renowned "Compound Semiconductor, Compound Semiconductor 2019, No. 2", stating: "The single-mode laser pioneeredly improved the side mode suppression ratio. , providing a competitive light source device for space-based satellite LIDAR systems and gas detection systems." In the high-power laser of telluride quantum wells, the research team innovated the key technology of growing the waveguide layer by digital alloy method, and successfully developed the InGaSb/AlGaAsSb strained quantum well high-power laser with 2μm band. The continuous output power of the single-tube device reached 1.62. The room temperature continuous output power of the tile and bar (line array) laser components is 16 watts, and the comprehensive performance has reached the international first-class level and broke the performance terms of the foreign high-power semiconductor laser export restrictions. The relevant results were selected as cover articles by Chin. Phys. B. 28(1), (2019).

The GaSb-based InGaAsSb lattice-matched heterojunction quantum well has an adjustable bandgap covering a short-wavelength infrared region of 1.8μm to 4.0μm. Compared with other laser material systems in this band, it is directly driven by the company. The efficiency of the laser has a unique advantage. In recent years, with the continuous advancement of molecular beam epitaxy technology of multi-element complex low-dimensional materials of germanium, the innovation of materials and optoelectronic devices related to germanium semiconductors has developed rapidly. The research results of the above-mentioned germanide semiconductor lasers have broken through the long-term card neck core technology in the short-wave infrared laser technology field, and will play an irreplaceable important value in many high-tech industries such as hazardous gas detection, environmental monitoring, medical treatment and laser processing.

The research work of this project has reached the national 973 major scientific research project topics 2013CB942904, 2014CB643903, the National Natural Science Foundation of China major project 61795580 and key projects 61435012 and other funding.

(Original title: Research on semiconductor semiconductor quantum well lasers has made significant progress)